bat 62-02w semiconductor group jul-02-1998 1 silicon schottky diode low barrier diode for detectors up to ghz frequencies 1 ves05991 2 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution type marking ordering code pin configuration package bat 62-02w l Q62702-A1028 1 = c 2 = a scd-80 maximum ratings parameter symbol value unit diode reverse voltage v r 40 v forward current i f 40 ma junction temperature t j 150 c storage temperature t st g -55 ...+150 thermal resistance junction - ambient 1) r thja 650 k/w junction - soldering point r thjs 810 1) package mounted on epoxy pcb 15mm x 16.7mm x 0.7mm semiconductor group 1 1998-11-01
bat 62-02w semiconductor group jul-02-1998 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics reverse current v r = 40 v i r - - 10 a forward voltage i f = 2 ma v f - 0.58 1 v ac characteristics diode capacitance v r = 1 v, f = 1 mhz c t - 0.35 0.6 pf case capacitance f = 1 mhz c c - 0.09 - differential resistance v r = 0 , f = 10 khz r 0 - 225 - k w series inductance chip to ground l s - 0.6 - nh semiconductor group 2 1998-11-01
bat 62-02w semiconductor group jul-02-1998 3 forward current i f = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 10 20 30 ma 50 i f t s 0 20 40 60 80 100 120 c 150 t a ,t s 0 10 20 30 ma 50 i f t a 0 20 40 60 80 100 120 c 150 t a ,t s 0 10 20 30 ma 50 i f permissible pulse load r thjs = f ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load i fmax / i fdc = f ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 - i fmax / i fdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 semiconductor group 3 1998-11-01
bat 62-02w semiconductor group jul-02-1998 4 forward current i f = f ( v f ) t a = parameter 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v 2.0 v f 1 10 2 10 3 10 4 10 ua i f t a = 25c t a = 85c t a = 125c t a = -40c leakage current i r = f (v r ) t a = parameter 0 5 10 15 20 25 30 v 40 v r -1 10 0 10 1 10 2 10 3 10 ua i r 0 5 10 15 20 25 30 v 40 v r -1 10 0 10 1 10 2 10 3 10 ua i r t a = 25c t a = 85c t a = 125c diode capacitance c t = f ( v r ) f = 1mhz 0 5 10 15 20 v 30 v r 0.0 0.1 0.2 0.3 pf 0.5 c t rectifier voltage v out = f ( v in ) f = 900 mhz r l = parameter in k w 10 0 10 1 10 2 10 3 10 4 mv v i -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 mv v o 1000 500 200 100 50 20 r l =10 semiconductor group 4 1998-11-01
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